HUF75343P3
MOSFET N-CH 55V 75A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUF75343P3 is an UltraFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This through-hole component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 75A at 25°C (Tc). With a low on-resistance (Rds On) of 9mOhm at 75A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 270W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 205 nC (Max) at 20V and input capacitance (Ciss) of 3000 pF (Max) at 25V. This MOSFET is suitable for demanding applications in power supplies, motor control, and industrial automation. The component is supplied in a TO-220-3 package.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
