HUF75343G3
MOSFET N-CH 55V 75A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUF75343G3 is an UltraFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 75 A at 25°C (Tc), with a maximum power dissipation of 270 W (Tc). The UltraFET™ technology provides a low on-resistance of 9 mOhm at 75 A and 10 V gate drive. Key electrical parameters include a Gate Charge (Qg) of 205 nC at 20 V and an Input Capacitance (Ciss) of 3000 pF at 25 V. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-247-3 through-hole configuration, the HUF75343G3 is suitable for use in demanding applications across various industries including automotive, industrial power supplies, and motor control.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
