HUF75337S3S
MOSFET N-CH 55V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi HUF75337S3S is an UltraFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 55V drain-source voltage rating and a continuous drain current capability of 75A at 25°C. The low on-resistance of 14mOhm at 75A and 10V gate drive voltage minimizes conduction losses. With a maximum power dissipation of 175W at 25°C (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The device is packaged in a TO-263-3, D2PAK surface mount configuration, facilitating efficient board integration. Key electrical characteristics include a typical gate charge of 109 nC at 20V and input capacitance of 1775 pF at 25V. This MOSFET is commonly utilized in power supplies, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1775 pF @ 25 V |
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