HUF75333S3ST
MOSFET N-CH 55V 66A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF75333S3ST is an N-Channel UltraFET™ MOSFET designed for high-current applications. This device offers a continuous drain current of 66A (Tc) at 25°C and a drain-to-source voltage (Vdss) of 55V. With a low on-resistance (Rds On) of 16mOhm at 66A and 10V gate drive, it minimizes conduction losses. The maximum power dissipation is rated at 150W (Tc). Key parameters include a gate charge (Qg) of 85 nC at 20V and input capacitance (Ciss) of 1300 pF at 25V. This component is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding thermal management. It operates across a temperature range of -55°C to 175°C (TJ). Applications span industrial power supplies, motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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