HUF75332P3
MOSFET N-CH 55V 60A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UltraFET™ HUF75332P3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 19mOhm at 60A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 145W (Tc), the HUF75332P3 is suitable for demanding applications. Key electrical characteristics include an input capacitance (Ciss) of 1300 pF at 25V and a gate charge (Qg) of 85 nC at 20V. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-220-3 through-hole configuration, this MOSFET is utilized in industries such as automotive, industrial power supplies, and motor control.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 145W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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