HUF75329G3
MOSFET N-CH 55V 49A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF75329G3 is an N-Channel Power MOSFET designed for robust performance in demanding applications. Featuring a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 49 A at 25°C (Tc), this component offers a maximum power dissipation of 128 W (Tc). The low on-resistance (Rds On) of 24 mOhm at 49 A and 10 V gate-source voltage (Vgs) ensures efficient power transfer. Key electrical characteristics include a gate charge (Qg) of 75 nC at 20 V and input capacitance (Ciss) of 1060 pF at 25 V. With a threshold voltage (Vgs(th)) of 4 V at 250 µA and a maximum Vgs of ±20 V, precise control is achievable. Operating across a temperature range of -55°C to 175°C (TJ), the HUF75329G3 is packaged in a TO-247-3 through-hole configuration, commonly utilized in power supply units, motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 49A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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