HUF75309T3ST
MOSFET N-CH 55V 3A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUF75309T3ST is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 3A at 25°C. The Rds(On) is specified at a maximum of 70mOhm when conducting 3A with a 10V gate-source voltage. With a Gate Charge (Qg) of 23 nC (max) at 20V and Input Capacitance (Ciss) of 352 pF (max) at 25V, the HUF75309T3ST offers balanced switching characteristics. The device is housed in a SOT-223-4 package, enabling surface mounting and suitable for compact designs. It operates within an extended temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.1W. This MOSFET is commonly utilized in industrial automation, power management, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 352 pF @ 25 V |
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