HUF75307T3ST
MOSFET N-CH 55V 2.6A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi HUF75307T3ST is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 2.6A at 25°C. The Rds(On) is specified at a maximum of 90mOhm at 2.6A and 10V gate drive. With a gate charge (Qg) of 17 nC (max) at 20V and input capacitance (Ciss) of 250 pF (max) at 25V, it is suitable for demanding power management tasks. The HUF75307T3ST operates within an industrial temperature range of -55°C to 150°C. Packaged in a compact SOT-223-4 (TO-261-4) surface-mount package, it is supplied on tape and reel. This component is utilized in various sectors including industrial power supplies, automotive electronics, and consumer electronics where robust and efficient power switching is paramount.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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