HUF75307D3ST
MOSFET N-CH 55V 15A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF75307D3ST is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 15A at 25°C, with a maximum power dissipation of 45W (Tc). The Rds On is specified at a maximum of 90mOhm at 15A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 20 nC (max) at 20V and input capacitance (Ciss) of 250 pF (max) at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is available in a TO-252AA surface mount package, supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial, and power supply applications where efficient power switching is critical.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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