HUF75307D3
MOSFET N-CH 55V 15A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUF75307D3 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 55 V. This through-hole component, packaged in an IPAK (TO-251AA) case, offers a continuous drain current of 15 A (Tc) and a maximum power dissipation of 45 W (Tc). Key electrical characteristics include a maximum Rds(on) of 90 mOhm at 15 A and 10 V Vgs, and a gate charge (Qg) of 20 nC at 20 V. Input capacitance (Ciss) is specified at a maximum of 250 pF at 25 V. The operating temperature range is -55°C to 175°C (TJ). This device is commonly utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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