FSS275-TL-E
MOSFET N-CH 60V 6A 8SOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FSS275-TL-E is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 6A at 25°C. With a low on-resistance of 43mOhm at 3A and 10V, it offers efficient power switching. The device has a maximum power dissipation of 1.9W and an operating temperature up to 150°C (TJ). Key electrical characteristics include an input capacitance (Ciss) of 1100pF at 20V and a gate charge (Qg) of 21nC at 10V. The FSS275-TL-E is housed in an 8-SOP package, commonly utilized in power management, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 20 V |
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