FQU9N25TU
MOSFET N-CH 250V 7.4A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU9N25TU is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a 250V Drain-Source Voltage (Vdss) and a continuous drain current of 7.4A (Tc) at 25°C, this device offers robust power handling capabilities. Its low on-resistance of 420mOhm at 3.7A and 10V Vgs, combined with a gate charge of 20 nC (max) at 10V, ensures efficient switching performance.
With a maximum power dissipation of 55W (Tc), the FQU9N25TU is suitable for power supply, motor control, and industrial automation systems. The TO-251-3 Short Leads, IPAK package provides a reliable through-hole mounting solution. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is built for reliability in diverse environmental conditions.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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