FQU8P10TU
MOSFET P-CH 100V 6.6A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi QFET® P-Channel MOSFET FQU8P10TU offers a 100V drain-source voltage and a continuous drain current of 6.6A at 25°C (Tc). This through-hole component features a maximum Rds On of 530mOhm at 3.3A and 10V Vgs, with a gate charge (Qg) of 15 nC at 10V. The IPAK package (TO-251-3 Short Leads) supports a maximum power dissipation of 44W (Tc). With an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
