FQU5P20TU
MOSFET P-CH 200V 3.7A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU5P20TU is a P-Channel MOSFET designed for power switching applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 3.7 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 1.4 Ohm at 1.85 A and 10 V gate drive, it offers efficient power handling. The device is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) for through-hole mounting and supports a maximum power dissipation of 45 W (Tc). Key characteristics include a Gate Charge (Qg) of 13 nC maximum and an Input Capacitance (Ciss) of 430 pF maximum. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in industrial and automotive power control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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