FQU5N60CTU
MOSFET N-CH 600V 2.8A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU5N60CTU is a 600V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current (Id) of 2.8A at 25°C (Tc) and a low on-resistance (Rds On) of 2.5 Ohm maximum at 1.4A, 10V. The IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) offers a through-hole mounting solution with a maximum power dissipation of 49W at 25°C (Tc). Key parameters include a gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 670 pF at 25V. This device operates across a temperature range of -55°C to 150°C and is suitable for industrial, automotive, and power supply applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 49W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |