FQU5N50TU
MOSFET N-CH 500V 3.5A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's FQU5N50TU is a QFET® series N-Channel Power MOSFET featuring a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.5 A at 25°C (Tc). This through-hole component is housed in a TO-251-3 Short Leads, IPAK package. It offers a maximum Rds On of 1.8 Ohm at 1.75 A and 10 V gate-source voltage. The device boasts a low gate charge (Qg) of 17 nC maximum at 10 V and an input capacitance (Ciss) of 610 pF maximum at 25 V. Power dissipation is rated at 2.5 W (Ta) and 50 W (Tc). This MOSFET is suitable for applications in power supply units, motor control, and general-purpose power switching across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 1.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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