FQU5N50CTU-WS
MOSFET N-CH 500V 4A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQU5N50CTU-WS is an N-Channel Power MOSFET from the QFET® series, packaged in a TO-251-3 Short Leads (IPAK) through-hole configuration. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 4 A at 25°C (Tc). With a maximum Rds(on) of 1.4 Ohms at 2 A and 10 V, it offers efficient switching characteristics for power management applications. The MOSFET has a specified gate charge (Qg) of 24 nC and an input capacitance (Ciss) of 625 pF. It supports a gate-source voltage (Vgs) range of ±30 V and a threshold voltage (Vgs(th)) of 4 V. The component is rated for a maximum power dissipation of 48 W at 25°C (Tc) and operates within an ambient temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, lighting control, and industrial automation systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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