FQU5N50CTU
MOSFET N-CH 500V 4A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQU5N50CTU is a 500V N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current rating of 4A (Tc) and a low on-resistance of 1.4 Ohm maximum at 2A and 10V Vgs. The FQU5N50CTU offers a drain-source voltage (Vdss) of 500V and a gate-source voltage range of ±30V. With a maximum gate charge (Qg) of 24 nC at 10V and input capacitance (Ciss) of 625 pF at 25V, it facilitates fast switching speeds. Power dissipation is rated at 48W (Tc) and 2.5W (Ta). Packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) format, this through-hole device is suitable for use in power supplies, lighting, and motor control systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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