FQU4N50TU-WS
MOSFET N-CH 500V 2.6A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU4N50TU-WS is a 500V N-Channel Power MOSFET featuring a TO-251-3 Short Leads, IPAK package. This device offers a continuous drain current capability of 2.6A (Tc) and a low on-resistance of 2.7 Ohm maximum at 1.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 13 nC maximum at 10V and input capacitance (Ciss) of 460 pF maximum at 25V. With a maximum power dissipation of 45W (Tc), this through-hole mounted component is suitable for applications requiring robust switching performance in demanding environments. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is widely utilized in power supply units, lighting, and motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |