FQU3P50TU
MOSFET P-CH 500V 2.1A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® series FQU3P50TU is a P-Channel MOSFET designed for power switching applications. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 2.1 A at 25°C (Tc). With a typical Rds On of 4.9 Ohms at 10V Vgs and 1.05A Id, it offers efficient switching performance. The device has a maximum Gate Charge (Qg) of 23 nC at 10 V and an input capacitance (Ciss) of 660 pF at 25 V. It is packaged in an IPAK (TO-251-3 Short Leads) through-hole configuration. Power dissipation is rated at 50W (Tc) and 2.5W (Ta). This component is suitable for use in industrial, automotive, and power supply applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9Ohm @ 1.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
