FQU30N06LTU
MOSFET N-CH 60V 24A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU30N06LTU is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current capability of 24A (Tc) at 25°C. With a maximum Rds(on) of 39mOhm at 12A and 10V gate drive, it offers efficient power handling. Key electrical characteristics include a maximum gate charge (Qg) of 20 nC at 5V and an input capacitance (Ciss) of 1040 pF at 25V. The device supports gate drive voltages from 5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 2.5W (Ta) and 44W (Tc). The FQU30N06LTU is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) through-hole configuration and operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly found in power supply units, motor control, and industrial automation systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 25 V |
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