FQU2N90TU-WS
MOSFET N-CH 900V 1.7A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQU2N90TU-WS is an N-Channel MOSFET designed for high-voltage applications. This component features a 900V drain-to-source voltage (Vdss) and a continuous drain current of 1.7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 7.2 Ohms at 850mA and 10V gate-source voltage, it offers efficient switching characteristics. The device has a maximum gate charge (Qg) of 15 nC at 10V and an input capacitance (Ciss) of 500 pF at 25V. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). The FQU2N90TU-WS is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. This MOSFET is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2Ohm @ 850mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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