FQU2N90TU
MOSFET N-CH 900V 1.7A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's QFET® FQU2N90TU is a 900V N-Channel Power MOSFET designed for high-voltage switching applications. This component features a continuous drain current rating of 1.7A (Tc) and a low on-resistance of 7.2 Ohms maximum at 850mA, 10V. The device offers a gate charge of 15 nC maximum at 10V and an input capacitance of 500 pF maximum at 25V. With a maximum power dissipation of 50W (Tc), it is suitable for demanding environments. The FQU2N90TU utilizes TO-251-3 Short Leads (IPAK) packaging for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2Ohm @ 850mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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