FQU2N50BTU-WS
MOSFET N-CH 500V 1.6A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU2N50BTU-WS is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 1.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 5.3 Ohms at 800mA and 10V Vgs, it offers low conduction losses. The device exhibits a gate charge (Qg) of 8 nC maximum at 10V and input capacitance (Ciss) of 230 pF maximum at 25V. Available in an IPAK (TO-251-3 Short Leads) through-hole package, it supports a maximum power dissipation of 2.5W (Ta) and 30W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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