FQU20N06TU
MOSFET N-CH 60V 16.8A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU20N06TU is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 16.8A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 63mOhm at 8.4A and 10V Vgs, it offers low conduction losses. The device exhibits a typical Gate Charge (Qg) of 15 nC at 10V and an Input Capacitance (Ciss) of 590 pF at 25V. Maximum power dissipation is rated at 38W (Tc) and 2.5W (Ta). The FQU20N06TU utilizes TO-251-3 Short Leads, IPAK packaging for through-hole mounting and operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly found in industrial, automotive, and power supply applications where robust switching performance is critical.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 25 V |
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