FQU20N06LTU
MOSFET N-CH 60V 17.2A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQU20N06LTU is an N-Channel Power MOSFET featuring a 60V drain-source voltage (Vdss). This through-hole component, housed in an IPAK (TO-251AA) package, offers a continuous drain current of 17.2A at 25°C (Tc) and a low on-resistance (Rds On) of 60mOhm maximum at 8.6A and 10V gate drive. With a maximum gate charge (Qg) of 13 nC at 5V and input capacitance (Ciss) of 630 pF at 25V, it is optimized for efficient switching. The device supports gate drive voltages from 5V to 10V and a maximum gate-source voltage of ±20V. It has a maximum power dissipation of 38W at 25°C (Tc) and operates within a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in industrial, automotive, and power supply applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 8.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
