FQU1N80TU
MOSFET N-CH 800V 1A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU1N80TU is a high-voltage N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 1A at 25°C (Tc), this component offers robust performance. The device exhibits a maximum On-Resistance (Rds On) of 20 Ohms at 500mA and 10V gate drive. Key parameters include a Gate Charge (Qg) of 7.2 nC (max) at 10V and Input Capacitance (Ciss) of 195 pF (max) at 25V. With a maximum power dissipation of 45W at 25°C (Tc), it is suitable for power factor correction and switch mode power supplies. The component is housed in a TO-251-3 Short Leads, IPAK package with through-hole mounting. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 25 V |