FQU1N60CTU
MOSFET N-CH 600V 1A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQU1N60CTU is a QFET® series N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 1A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 11.5 Ohms at 500mA and 10V gate drive, it offers efficient switching characteristics. Key parameters include a gate charge (Qg) of 6.2 nC and input capacitance (Ciss) of 170 pF at 25V. The device is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) and supports a maximum junction temperature of 150°C. Power dissipation is rated at 28W (Tc) and 2.5W (Ta). This MOSFET is commonly employed in power supply units, lighting control, and motor drive circuits.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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