FQU17P06TU
MOSFET P-CH 60V 12A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU17P06TU is a P-Channel MOSFET designed for power management applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum on-resistance (Rds On) of 135mOhm at 6A and 10V gate-source voltage, it offers efficient switching. The device exhibits a gate charge (Qg) of 27 nC at 10V and an input capacitance (Ciss) of 900 pF at 25V. Power dissipation is rated at 2.5W (Ta) and 44W (Tc). The FQU17P06TU is housed in an IPAK (TO-251-3 Short Leads) package for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in industrial automation, power supplies, and automotive systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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