FQU13N10TU
MOSFET N-CH 100V 10A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQU13N10TU is an N-Channel QFET® series MOSFET designed for through-hole mounting in an IPAK package (TO-251-3 Short Leads, TO-251AA). This component offers a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 10 A at 25°C (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 180 mOhm at 5 A and 10 V, a gate charge (Qg) of 16 nC at 10 V, and an input capacitance (Ciss) of 450 pF at 25 V. Power dissipation is rated at 2.5 W (Ta) and 40 W (Tc). The operating temperature range is -55°C to 150°C (TJ). This MOSFET finds application in various industrial sectors, including power supplies and motor control.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
