FQU13N10LTU
MOSFET N-CH 100V 10A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU13N10LTU is a through-hole N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current capability of 10A (Tc). With a low on-resistance (Rds On) of 180mOhm maximum at 5A and 10V, it minimizes conduction losses. The device offers a gate charge (Qg) of 12 nC maximum at 5V and an input capacitance (Ciss) of 520 pF maximum at 25V. Maximum power dissipation is rated at 40W (Tc) and 2.5W (Ta). The IPAK package (TO-251-3 Short Leads) is suitable for various industrial and consumer electronics applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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