FQU13N06LTU-WS
MOSFET N-CH 60V 11A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® series FQU13N06LTU-WS is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C (Tc). With a low on-resistance (Rds On) of 115mOhm maximum at 5.5A and 10V, it minimizes conduction losses. The FQU13N06LTU-WS operates with gate drive voltages of 5V and 10V, and a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a gate charge (Qg) of 6.4 nC maximum at 5V and input capacitance (Ciss) of 350 pF maximum at 25V. Power dissipation is rated at 2.5W (Ta) and 28W (Tc). The component is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Typical applications include industrial power supplies, motor control, and general-purpose power switching.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
