FQU13N06LTU
MOSFET N-CH 60V 11A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQU13N06LTU is a 60V N-Channel MOSFET designed for power switching applications. This device features a continuous drain current (Id) of 11A at 25°C (Tc) and a low on-resistance (Rds On) of 115mOhm maximum at 5.5A, 10V. With a gate charge (Qg) of 6.4 nC maximum at 5V and input capacitance (Ciss) of 350 pF maximum at 25V, it offers efficient switching characteristics. The TO-251-3 Short Leads, IPAK package facilitates through-hole mounting. This component is suitable for use in industrial and automotive power management systems. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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