FQU11P06TU
MOSFET P-CH 60V 9.4A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQU11P06TU is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 9.4A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 185mOhm at 4.7A and 10V gate drive, it offers efficient power switching. The IPAK package, also known as TO-251-3 Short Leads or TO-251AA, supports through-hole mounting. Key electrical parameters include a Gate Charge (Qg) of 17nC and Input Capacitance (Ciss) of 550pF at 25V. Power dissipation is rated at 2.5W (Ta) and 38W (Tc). Operating temperature range is -55°C to 150°C (TJ). This device is commonly employed in power management, automotive, and industrial control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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