FQT7N10TF
MOSFET N-CH 100V 1.7A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQT7N10TF is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 1.7 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 350 mOhm at 850 mA and a gate-source voltage of 10 V. With a maximum power dissipation of 2 W (Tc) and a gate charge (Qg) of 7.5 nC at 10 V, this MOSFET is suitable for power management in various industrial and consumer electronics segments. The FQT7N10TF is supplied in a SOT-223-4 (TO-261-4) surface mount package, facilitating compact board designs. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±25V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 850mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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