FQT5P10TF
MOSFET P-CH 100V 1A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® P-Channel MOSFET, part number FQT5P10TF, offers a 100V drain-to-source breakdown voltage and 1A continuous drain current at 25°C. This device features a maximum on-resistance of 1.05 Ohms at 500mA and 10V gate-source voltage. With a 2W power dissipation capability, it is housed in a SOT-223-4 surface mount package. Key parameters include 8.2 nC gate charge and 250 pF input capacitance. Operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 47 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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