FQT4N25TF
MOSFET N-CH 250V 830MA SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQT4N25TF is an N-Channel Power MOSFET designed for efficient power switching applications. This device offers a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 830mA (Tc) at 25°C. Key parameters include a maximum On-Resistance (Rds On) of 1.75 Ohms at 415mA and 10V Vgs, and a typical Gate Charge (Qg) of 5.6 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 200 pF at 25V. With a maximum power dissipation of 2.5W (Tc), it is suitable for applications requiring reliable performance in demanding environments, operating across a temperature range of -55°C to 150°C. The FQT4N25TF is supplied in a SOT-223-4 package, also known as TO-261-4, and is available on Tape & Reel (TR). This MOSFET finds utility in various industrial sectors, including power supplies and motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 830mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 415mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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