FQT4N20LTF
MOSFET N-CH 200V 850MA SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQT4N20LTF is a QFET® series N-channel MOSFET designed for power switching applications. This device features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 850mA at 25°C. With a maximum on-resistance (Rds On) of 1.35 Ohms at 425mA and 10V Vgs, it offers efficient conduction. The FQT4N20LTF has a gate charge (Qg) of 5.2 nC maximum at 5V Vgs and an input capacitance (Ciss) of 310 pF maximum at 25V Vds. It is packaged in a SOT-223-4 (TO-261-4) surface mount configuration, suitable for demanding thermal environments with a power dissipation of 2.2W (Tc). This component operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel packaging. Industries utilizing this MOSFET include industrial and consumer electronics.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 47 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 850mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 425mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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