FQT3P20TF
MOSFET P-CH 200V 670MA SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQT3P20TF is a P-Channel Power MOSFET in a SOT-223-4 package. This device features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 670 mA at 25°C (Tc). The maximum power dissipation is 2.5 W (Tc). Key electrical parameters include a maximum on-resistance (Rds On) of 2.7 Ohms at 335 mA and 10 V, and a gate charge (Qg) of 8 nC at 10 V. Input capacitance (Ciss) is a maximum of 250 pF at 25 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power management and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 670mA (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 335mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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