FQT2P25TF
MOSFET P-CH 250V 550MA SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi QFET® P-Channel MOSFET, part number FQT2P25TF, offers a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 550mA at 25°C. This device features a maximum on-resistance (Rds On) of 4 Ohms at 275mA and 10V gate drive. The SOT-223-4 package facilitates surface mounting. Key parameters include a gate charge of 8.5 nC at 10V and input capacitance (Ciss) of 250 pF at 25V. With a maximum power dissipation of 2.5W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in industrial and power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 550mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 275mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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