FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FQT1N60CTF-WS is a QFET® series N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 200mA at 25°C, with a maximum power dissipation of 2.1W. The Rds On is specified at 11.5 Ohms maximum at 100mA and 10V gate drive. Key parameters include a gate charge (Qg) of 6.2 nC @ 10V and input capacitance (Ciss) of 170 pF @ 25V. The device operates across a wide temperature range of -55°C to 150°C and is housed in a SOT-223-4 package, suitable for surface mounting. This MOSFET is utilized in various industries including industrial automation, power supplies, and consumer electronics.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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