FQT13N06TF
MOSFET N-CH 60V 2.8A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQT13N06TF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2.8A at 25°C (Tc). It offers a maximum On-Resistance (Rds On) of 140mOhm at 1.4A and 10V gate drive. The device boasts a low Gate Charge (Qg) of 7.5 nC at 10V and an Input Capacitance (Ciss) of 310 pF (Max) at 25V. Packaged in a SOT-223-4 (TO-261-4, TO-261AA) surface-mount configuration and supplied on tape and reel, this MOSFET is suitable for industrial, automotive, and consumer electronics power management circuits. Its maximum power dissipation is rated at 2.1W (Tc) with an operating temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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