FQT13N06LTF
MOSFET N-CH 60V 2.8A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQT13N06LTF is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2.8A at 25°C, with a maximum power dissipation of 2.1W (Tc). It offers a low Rds On of 110mOhm at 1.4A and 10V. The FQT13N06LTF utilizes MOSFET technology and is housed in a SOT-223-4 (TO-261-4, TO-261AA) surface mount package, supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 6.4 nC at 5V and Input Capacitance (Ciss) of 350 pF at 25V. This device is suitable for use in power management circuits across various industries.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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