FQPF9P25-T
MOSFET P-CH 250V 6A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQPF9P25-T is a P-Channel MOSFET designed for power switching applications. This component features a drain-source breakdown voltage (Vdss) of 250V and a continuous drain current (Id) of 6A at 25°C. The Rds(on) is specified at a maximum of 620mOhm at 3A and 10V gate drive. Key parameters include a gate charge (Qg) of 38 nC (max) at 10V and input capacitance (Ciss) of 1180 pF (max) at 25V. With a maximum power dissipation of 50W (Tc), it is suitable for use in power supplies, motor control, and general-purpose power switching across various industrial sectors. The device is packaged in a TO-220F-3 configuration for through-hole mounting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
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