FQPF9N90C
MOSFET N-CH 900V 8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF9N90C is an N-Channel Power MOSFET designed for high voltage applications. This TO-220F-3 packaged device features a Drain-Source Voltage (Vdss) of 900 V and a continuous Drain Current (Id) of 8A at 25°C. With a maximum power dissipation of 68W (Tc) and a low on-resistance of 1.4 Ohm at 4A and 10V Vgs, it offers efficient switching performance. Key parameters include a Gate Charge (Qg) of 58 nC at 10V and an Input Capacitance (Ciss) of 2730 pF at 25V. The device supports a wide operating temperature range from -55°C to 150°C. This MOSFET is commonly utilized in power factor correction, switch mode power supplies, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2730 pF @ 25 V |