FQPF9N50CYDTU
MOSFET N-CH 500V 9A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF9N50CYDTU is an N-Channel Power MOSFET from the QFET® series, designed for demanding applications. This component features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9 A at 25°C. With a maximum power dissipation of 44 W (Tc) and an Rds On of 800 mOhm at 4.5 A and 10 V, it offers efficient switching performance. The TO-220F-3 (Y-Forming) package with through-hole mounting facilitates integration into various circuit designs. Key electrical characteristics include a gate charge (Qg) of 35 nC at 10 V and an input capacitance (Ciss) of 1030 pF at 25 V. This MOSFET is suitable for use in power supply units, motor control, and lighting applications. Operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V |