FQPF9N25CT
MOSFET N-CH 250V 8.8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQPF9N25CT is an N-Channel Power MOSFET designed for applications requiring high voltage and efficient switching. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain current (Id) of 8.8A at 25°C. Its low on-resistance of 430mOhm at 4.4A and 10V gate drive contributes to reduced conduction losses. The device offers a maximum power dissipation of 38W (Tc) and a gate charge (Qg) of 35 nC at 10V. With an input capacitance (Ciss) of 710 pF at 25V, it is suitable for power supply units, lighting, and motor control systems. The FQPF9N25CT is packaged in a TO-220F-3 through-hole configuration for robust mounting and thermal management, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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