FQPF9N08
MOSFET N-CH 80V 7A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF9N08 is a QFET® series N-channel power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 7A at 25°C, with a maximum power dissipation of 23W. The Rds On is specified at a maximum of 210mOhm at 3.5A and 10V Vgs. Key parameters include a quiescent Gate Charge (Qg) of 7.7 nC at 10V and an input capacitance (Ciss) of 250 pF at 25V. It operates over a wide temperature range of -55°C to 175°C and is housed in a through-hole TO-220F-3 package. This device is suitable for use in power supply units, motor control, and general-purpose switching applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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