FQPF7P06
MOSFET P-CH 60V 5.3A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQPF7P06 is a P-Channel Power MOSFET with a 60V drain-to-source breakdown voltage. This through-hole component, packaged in a TO-220F-3, offers a continuous drain current of 5.3A (Tc) and a maximum power dissipation of 24W (Tc). Key electrical characteristics include a low on-resistance of 410mOhm at 2.65A and 10V, and a gate charge (Qg) of 8.2nC at 10V. The input capacitance (Ciss) is 295pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in power supply design and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 2.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 24W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |
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