FQPF7N80
MOSFET N-CH 800V 3.8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQPF7N80 is an N-Channel Power MOSFET from the QFET® series, designed for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 3.8 A at 25°C, with a maximum power dissipation of 56 W. The on-resistance (Rds On) is specified as 1.5 Ohm at 1.9 A and 10 V. Key parameters include a Gate Charge (Qg) of 52 nC at 10 V and input capacitance (Ciss) of 1850 pF at 25 V. The MOSFET is housed in a TO-220F-3 package, suitable for through-hole mounting. Operating temperature range is from -55°C to 150°C. This component is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V |
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